Ferromagnetic clusters compatible with semiconductor crystal lattice attract great attention, since the interplay between electrical and magnetic properties stimulates engineering of quantum logic and magnetic logic devices. Other possible application of nanoclusters controlled by charge carriers is nano-scale spin injectors providing spin polarization of charge carriers and magnetic memory readout or storage devices based on the anomalous Hall effect. All necessary properties are inherent to GaSbMn films due to enhanced tunnelling exchange between free carriers and ferromagnetic clusters under high concentration of holes. The interaction of free carriers with ferromagnetic inclusions is subject of our investigations. The CoO nanoparticles images by HR TEM are shown in the figures.